IRFP460 datasheet(4/8 Pages) VISHAY

No de pièce	IRFP460

Description	Power MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 91237

4

S-81360-Rev. A, 28-Jul-08

IRFP460, SiHFP460

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

91237_05

10 000

8000

6000

4000

0

2000

100

101

VDS, Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS = 0 V, f = 1 MHz

C

iss = Cgs + Cgd, Cds Shorted

C

rss = Cgd

C

oss = Cds + Cgd

91237_06

I

D = 20 A

V

DS = 250 V

For test circuit

see figure 13

V

DS = 100 V

V

DS = 400 V

QG, Total Gate Charge (nC)

20

16

12

8

0

4

0

40

200

160

120

80

91237_07

102

VSD, Source-to-Drain Voltage (V)

0.6

1.2

1.0

0.8

1.6

1.4

25

°C

150

°C

V

GS = 0 V

101

1.8

2.0

91237_08

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

T

C = 25 °C

T

J = 150 °C

Single Pulse

103

2

5

2

5

2

5

VDS, Drain-to-Source Voltage (V)

1

10

102

103

25

2

5

2

5

1

10

102

Numéro de pièce similaire - IRFP460

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