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IRFB16N50KPBF Fiches technique(PDF) 1 Page - Vishay Siliconix |
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IRFB16N50KPBF Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91096 www.vishay.com S-80567-Rev. A, 20-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFB16N50K, SiHFB16N50K Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current •Low RDS(on) • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • Hard Switched and High Frequency Circuits Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 2.2 mH, RG = 25 Ω, IAS = 17 A. c. ISD ≤ 17 A, dI/dt ≤ 500 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Single N-Channel MOSFET G D S TO-220 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRFB16N50KPbF SiHFB16N50K-E3 SnPb IRFB16N50K SiHFB16N50K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 17 A TC = 100 °C 11 Pulsed Drain Currenta IDM 68 Linear Derating Factor 2.3 W/°C Single Pulse Avalanche Energyb EAS 310 mJ Repetitive Avalanche Currenta IAR 17 A Repetitive Avalanche Energya EAR 28 mJ Maximum Power Dissipation TC = 25 °C PD 280 W Peak Diode Recovery dV/dtc dV/dt 11 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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