IRF740AS datasheet(1/8 Pages) VISHAY

No de pièce	IRF740AS

Description	Power MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 91052

www.vishay.com

S-Pending-Rev. A, 19-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRF740AS, IRF740AL, SiHF740AS, SiHF740AL

Vishay Siliconix

FEATURES

• Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully

Characterized

Capacitance

and

Avalanche Voltage and Current

• Effective Coss specified (AN 1001)

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Flyback Xfmr. Reset

• Single Transistor Forward Xfmr. Reset

(Both for US Line Input Only)

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting TJ = 25 °C, L = 12.6 mH, RG = 25 Ω, IAS = 10 A (see fig. 12).

c. ISD ≤ 10 A, dI/dt ≤ 330 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

e. Uses IRF740A/SiHF740A data and test conditions.

PRODUCT SUMMARY

VDS (V)

400

RDS(on) (Ω)VGS = 10 V

0.55

Qg (Max.) (nC)

36

Qgs (nC)

9.9

Qgd (nC)

16

Configuration

Single

N-Channel MOSFET

G

D

S

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

D2PAK (TO-263)

I2PAK (TO-262)

Lead (Pb)-free

IRF740ASPbF

IRF740ASTRLPbFa

IRF740ASTRRPbFa

IRF740ALPbF

SiHF740AS-E3

SiHF740ASTL-E3a

SiHF740ASTR-E3a

SiHF740AL-E3

SnPb

IRF740AS

IRF740ASTRLa

IRF740ASTRRa

IRF740AL

SiHF740AS

SiHF740ASTLa

SiHF740ASTRa

SiHF740AL

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

400

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Currente

VGS at 10 V

TC = 25 °C

ID

10

A

TC = 100 °C

6.3

Pulsed Drain Currenta, e

IDM

40

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energyb, e

EAS

630

mJ

Avalanche Currenta

IAR

10

A

Repetiitive Avalanche Energya

EAR

12.5

mJ

Maximum Power Dissipation

TA = 25 °C

PD

3.1

W

TC = 25 °C

125

Peak Diode Recovery dV/dtc, e

dV/dt

5.9

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

* Pb containing terminations are not RoHS compliant, exemptions may apply

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