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STP180NS04ZC Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STP180NS04ZC
Description  N-channel clamped 3.5 m廓 - 120 A TO-220 fully protected SAFeFET??Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP180NS04ZC Fiches technique(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP180NS04ZC
4/12
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DG Clamped voltage
ID = 1 mA, VGS = 0
-40 < Tj < 175 °C
33
41
V
VDSR(CL)
Drain-source clamping
voltage (DC)
IGS(CL) = -2 mA, ID = 1 A
41
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 16 V
VDS = 16 V, Tj = 150 °C
VDS = 16 V, Tj = 175 °C
1
50
100
µA
µA
µA
IGSS
(1)
1.
Gate Oxide, without zener diodes, tested at wafer sorting (IGSS < ± 100 nA @ ± 20 V Tj=25°). Figure 17.:
Unclamped Inductive load test circuit for electrical schematics
Gate-body leakage
current (VDS = 0)
VGS = ±10 V
VGS = ±10 V,Tj = 175 °C
VGS = ±16 V,Tj = 175 °C
2
50
150
µA
µA
µA
VGSS
Gate-source
breakdown voltage
IGS = ±100 µA
18
25
V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 40 A
3.5
4.2
m
RG
Internal gate resistor
14
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS =15 V, ID = 40 A
95
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
4560
1700
550
pF
pF
pF
tr(Voff)
tf
tc
Off voltage rise time
Fall time
Cross-over time
VCLAMP=30 V, ID=80 A,
VGS=10 V, RG=4.7 Ω
(see Figure 16)
250
115
290
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=20 V, ID = 120 A
VGS =10 V
(see Figure 15)
110
29
40
nC
nC
nC


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