STK28N3LLH5 datasheet(4/13 Pages) STMICROELECTRONICS

No de pièce	STK28N3LLH5

Description	N-channel 30 V, 0.0035 廓, 28 A, PolarPAK짰 STripFET?줧 Power MOSFET

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Electrical characteristics

STK28N3LLH5

4/13

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

30

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125°C

1

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 22 V

±

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

12.5

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 14 A

VGS= 4.5 V, ID= 14 A

0.0035

0.0047

0.0045

0.0055

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

2300

450

61

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 28 A

VGS =4.5 V

(see Figure 3)

19

TBD

nC

Qgs1

Qgs2

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

VDD=15 V, ID = 28 A

VGS =4.5 V

(see Figure 8)

TBD

nC

RG

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

TBD

Ω

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