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STU10NM65N Fiches technique(PDF) 4 Page - STMicroelectronics |
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STU10NM65N Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 4/17 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 650 V dv/dt (1) 1. Characteristics value at turn off on inductive load Drain source voltage slope VDD= 520 V, ID= 9 A, VGS= 10 V 25 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 4.5 A 0.43 0.48 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS=15 V, ID = 4.5 A 7.5 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 850 53 4 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 520 V 90 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 9 A, VGS = 10 V, (see Figure 19) 25 14 4 nC nC nC |
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