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STF10NM65N Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STF10NM65N
Description  N-channel 650 V, 0.43 廓, 9 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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October 2008
Rev 3
1/17
17
STD10NM65N - STF10NM65N
STP10NM65N - STU10NM65N
N-channel 650 V, 0.43
Ω, 9 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1.
Internal schematic diagram
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STD10NM65N
710 V
< 0.48
9 A
STF10NM65N
710 V
< 0.48
9 A(1)
1.
Limited only by maximum temperature allowed
STP10NM65N
710 V
< 0.48
9 A
STU10NM65N
710 V
< 0.48
9 A
TO-220
TO-220FP
IPAK
1
2
3
1
2
3
3
2
1
1
3
DPAK
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD10NM65N
10NM65N
DPAK
Tape & reel
STF10NM65N
10NM65N
TO-220FP
Tube
STP10NM65N
10NM65N
TO-220
Tube
STU10NM65N
10NM65N
IPAK
Tube
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