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STW8NC90Z Fiches technique(PDF) 1 Page - STMicroelectronics |
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STW8NC90Z Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 8 page 1/8 July 2000 STW8NC90Z N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv/dt CAPABILITY GATE- TO-SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area (1)ISD ≤7.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*)Limited only by maximum temperature allowed TYPE VDSS RDS(on) ID STW8NC90Z 900 V < 1.38 Ω 7.6 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 900 V VGS Gate- source Voltage ±25 V ID Drain Current (continuos) at TC = 25°C 7.6 A ID Drain Current (continuos) at TC = 100°C 4.8 A IDM (q) Drain Current (pulsed) 30 A PTOT Total Dissipation at TC = 25°C 190 W Derating Factor 1.51 W/°C IGS Gate-source Current (*) ±50 mA VESD(G-S) Gate source ESD(HBM-C=100pF, R=15K Ω) 4KV dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C TO-247 |
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