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STH16NA40 Fiches technique(PDF) 2 Page - STMicroelectronics |
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STH16NA40 Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 6 page THERMAL DATA TO-247 ISOWATT218 Rthj-case Thermal Resistance Junction-case Max 0.69 1.78 oC/W Rthj-amb Rthc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 30 0.1 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 16 A EAS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR, VDD = 50 V) 435 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 23 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ < 1%) 10 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 400 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating x 0.8 Tc = 100 oC 25 250 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30 V ±100 nA ON ( ∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2.25 3 3.75 V RDS(on) Static Drain-source On Resistance VGS = 10V ID = 8 A VGS = 10V ID = 8 A Tc = 100 oC 0.21 0.3 0.6 Ω Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V 16 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs ( ∗) Forward Transconductance VDS > ID(on) x RDS(on)max ID = 8 A 912 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V f = 1 MHz VGS = 0 2600 390 120 3500 540 160 pF pF pF ® STW16NA40-STH16NA40FI 2/6 |
Numéro de pièce similaire - STH16NA40 |
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Description similaire - STH16NA40 |
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