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STU9NC80ZI Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STU9NC80ZI
Description  N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STU9NC80ZI Fiches technique(HTML) 3 Page - STMicroelectronics

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STU9NC80Z/STU9NC80ZI
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
SWITCHING OFF (INDUCTIVE LOAD)
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆VBV = αT (25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 400V, ID = 4.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
35
ns
tr
Rise Time
16
ns
Qg
Total Gate Charge
VDD = 640V, ID = 9 A,
VGS = 10V
72.2
101
nC
Qgs
Gate-Source Charge
19.5
nC
Qgd
Gate-Drain Charge
24.3
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 640V, ID = 9 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
32
ns
tf
Fall Time
42
ns
tc
Cross-over Time
67
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
8.6
A
ISDM (2)
Source-drain Current (pulsed)
34.4
A
VSD (1)
Forward On Voltage
ISD = 8.6 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 9 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
730
ns
Qrr
Reverse Recovery Charge
7.2
µC
IRRM
Reverse Recovery Current
19.5
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
25
V
αT
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10-4/°C
Rz
Dynamic Resistance
IGS = 50 mA, VGS = 0
90


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