2SD1137 datasheet(5/6 Pages) RENESAS

No de pièce	2SD1137

Description	Silicon NPN Triple Diffused

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Fabricant	RENESAS [Renesas Technology Corp]

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2SD1137

3

Typical Output Characteristecs

1.0

0.8

0.6

0.4

0.2

02

4

Collector to emitter voltage VCE (V)

10

8

6

TC = 25°C

IB = 0

2 mA

4

6

8

10

1,000

300

100

30

10

0.01

0.03

0.1

0.3

1.0

Collector current IC (A)

10

3

DC Current Transfer Ratio

vs. Collector Current

25

°C

VCE = 5 V

–25

°C

TC = 75°C

25

°C

–25

°C

TC = 75°C

10

3

1.0

0.3

0.01

0.03

0.1

0.01

0.03

0.1

0.3

3

1.0

10

Collector to Emitter Saturation Voltage

vs. Collector Current

Collector current IC (A)

IC = 10 IB

1.5

1.0

0.5

0

0.01

0.03

3

1.0

0.3

10

0.1

Base to Emitter Saturation Voltage

vs. Collector Current

Collector current IC (A)

25

°C

75

°C

TC = –25°C

IC = 10 IB

Numéro de pièce similaire - 2SD1137

Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	2SD1137	31Kb / 5P	Silicon NPN Triple Diffused
List of Unclassifed Man...	2SD1137	55Kb / 2P	Power Bipolar Transistors
Inchange Semiconductor ...	2SD1137	96Kb / 5P	Silicon NPN Power Transistors
Savantic, Inc.	2SD1137	132Kb / 5P	Silicon NPN Power Transistors
Savantic, Inc.	2SD1137	134Kb / 5P	Silicon NPN Power Transistors

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Description similaire - 2SD1137

Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	2SC4692	44Kb / 5P	SILICON NPN TRIPLE DIFFUSED DIFFUSED
	2SD2300	32Kb / 5P	Silicon NPN Triple Diffused
	2SD1606	35Kb / 6P	Silicon NPN Triple Diffused
	2SD2107	32Kb / 6P	Silicon NPN Triple Diffused
	2SC1881	35Kb / 6P	Silicon NPN Triple Diffused
	2SC2611	30Kb / 6P	Silicon NPN Triple Diffused
	2SC4499	39Kb / 8P	Silicon NPN Triple Diffused
	2SC4797	20Kb / 4P	Silicon NPN Triple Diffused
	2SC3322	45Kb / 7P	Silicon NPN Triple Diffused
Renesas Technology Corp	2SC1515	160Kb / 5P	Silicon NPN Triple Diffused
Renesas Technology Corp	2SD1126	147Kb / 7P	Silicon NPN Triple Diffused

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2SD1137 Fiches technique(PDF) 5 Page - Renesas Technology Corp

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