Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

Preview PDF HTML

2SJ535 Fiches technique(PDF) 5 Page - Renesas Technology Corp

No de pièce 2SJ535
Description  Silicon P Channel MOS FET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ535 Fiches technique(HTML) 5 Page - Renesas Technology Corp

  2SJ535 Datasheet HTML 1Page - Renesas Technology Corp 2SJ535 Datasheet HTML 2Page - Renesas Technology Corp 2SJ535 Datasheet HTML 3Page - Renesas Technology Corp 2SJ535 Datasheet HTML 4Page - Renesas Technology Corp 2SJ535 Datasheet HTML 5Page - Renesas Technology Corp 2SJ535 Datasheet HTML 6Page - Renesas Technology Corp 2SJ535 Datasheet HTML 7Page - Renesas Technology Corp 2SJ535 Datasheet HTML 8Page - Renesas Technology Corp  
Zoom Inzoom in Zoom Outzoom out
 5 / 8 page
background image
2SJ535
Rev.4.00 Sep 07, 2005 page 5 of 7
Source to Drain Voltage
VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
100
25
50
75
100
125
150
0
20
40
60
80
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
IAP = –30 A
VDD = –25 V
duty < 0.1 %
Rg
≥ 50 Ω
–50
0
–10
–20
–30
–40
0
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
–5 V
VGS = 0
–10 V
Avalanche Test Circuit
Avalanche Waveform
0
ID
VDS
IAP
V(BR)DSS
VDD
EAR =
• L • IAP
2 •
2
1
VDSS
VDSS – VDD
D.U.T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Ω
Vin
–15 V
L
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
µ
100
µ
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pul
se
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 3.57°C/W, Tc = 25°C


Numéro de pièce similaire - 2SJ535

FabricantNo de pièceFiches techniqueDescription
logo
Hitachi Semiconductor		 2SJ535 HITACHI-2SJ535 Datasheet
54Kb / 9P		    Silicon P Channel MOS FET High Speed Power Switching
logo
Renesas Technology Corp		 2SJ535 RENESAS-2SJ535_15 Datasheet
108Kb / 10P		    Silicon P Channel MOS FET
More results

Description similaire - 2SJ535

FabricantNo de pièceFiches techniqueDescription
logo
Hitachi Semiconductor		 2SJ221 HITACHI-2SJ221 Datasheet
48Kb / 8P		    Silicon P-Channel MOS FET
2SJ363 HITACHI-2SJ363 Datasheet
37Kb / 7P		    Silicon P-Channel MOS FET
2SJ386 HITACHI-2SJ386 Datasheet
38Kb / 7P		    Silicon P-Channel MOS FET
logo
Renesas Technology Corp		 2SJ181(L) RENESAS-2SJ181(L)_15 Datasheet
109Kb / 7P		    Silicon P Channel MOS FET
2SJ555 RENESAS-2SJ555_15 Datasheet
109Kb / 10P		    Silicon P Channel MOS FET
2SJ518 RENESAS-2SJ518_15 Datasheet
102Kb / 9P		    Silicon P Channel MOS FET
2SJ526 RENESAS-2SJ526_15 Datasheet
110Kb / 10P		    Silicon P Channel MOS FET
2SJ542 RENESAS-2SJ542_15 Datasheet
107Kb / 10P		    Silicon P Channel MOS FET
2SJ543 RENESAS-2SJ543_15 Datasheet
107Kb / 10P		    Silicon P Channel MOS FET
2SJ550 RENESAS-2SJ550 Datasheet
95Kb / 9P		    Silicon P Channel MOS FET
2SJ551 RENESAS-2SJ551 Datasheet
95Kb / 9P		    Silicon P Channel MOS FET
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com