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2SK3211L-E Fiches technique(PDF) 4 Page - Renesas Technology Corp |
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2SK3211L-E Fiches technique(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page 2SK3211(L), 2SK3211(S) Rev.4.00 May 15, 2006 page 4 of 8 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 250 200 150 100 50 –40 0 40 80 120 160 0 0.1 0.3 1 3 10 30 100 50 20 5 10 1 2 0.5 VGS = 4 V 10 V 25 °C Tc = –25 °C 75 °C Pulse Test VDS = 10 V Pulse Test 5,10,15 A 5,10,15 A 0.1 0.3 1 3 10 30 100 010 20 30 40 50 2000 10000 1000 100 200 500 200 160 120 80 40 0 20 16 12 8 4 40 80 120 160 200 0 1000 500 50 100 20 10 200 200 1000 20 100 10 0.1 0.2 1 2 10 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 20 50 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 20 A VGS VDS VDD = 150 V 100 V 50 V tf tr td(on) td(off) VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % VDD = 150 V 100 V 50 V 50 500 0.5 5 5000 |
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Description similaire - 2SK3211L-E |
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