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2SK3160 Fiches technique(PDF) 3 Page - Renesas Technology Corp |
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2SK3160 Fiches technique(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page 2SK3160 Rev.3.00 Sep 07, 2005 page 3 of 7 Main Characteristics Power vs. Temperature Derating Case Temperature TC (°C) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Drain to Source Voltage VDS (V) Typical Transfer Characteristics Gate to Source Voltage VGS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 40 30 20 10 0 50 100 150 200 100 3 10 1 0.1 0.01 12 10 20 100 20 16 12 8 4 0 12 34 5 0 24 6 8 10 Ta = 25 °C Tc = 75 °C 25 °C –25 °C Operation in this area is limited by RDS(on) VDS = 10 V Pulse Test 100 µs 1 ms PW =10 ms (1shot) DC Operation (Tc = 25 °C) 10 µs 20 16 12 8 4 3.5 V 3 V VGS =2.5 V 10 V Pulse Test 5 V 4 V 0.3 0.03 500 30 5 50 200 1 10 5 500 20 50 10 2 5 4 3 2 1 0 48 12 16 20 ID = 10 A 2 A 50 20 200 100 VGS = 4 V 10 V Pulse Test Pulse Test 100 5 A |
Numéro de pièce similaire - 2SK3160 |
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Description similaire - 2SK3160 |
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