Moteur de recherche de fiches techniques de composants électroniques |
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2SK3159-E Fiches technique(PDF) 3 Page - Renesas Technology Corp |
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2SK3159-E Fiches technique(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page 2SK3159 Rev.4.00 May 15, 2006 page 3 of 7 Main Characteristics Power vs. Temperature Derating Case Temperature Tc ( °C) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Drain to Source Voltage VDS (V) Typical Transfer Characteristics Gate to Source Voltage VGS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 160 0 0 40 80 120 50 100 150 200 200 100 20 2 10 0.1 0.3 1 3 10 300 100 50 0 0 40 30 20 10 24 6 8 10 100 0 0 20 40 60 80 12 34 5 0.2 0.1 1 3.5 V 4 V VGS = 2 V 3 V 2.5 V Pulse Test 10 V 500 0.5 5 50 0.05 30 1000 2.0 0 0 0.4 0.8 1.2 1.6 4 8 12 16 20 100 200 10 550 20 100 20 50 10 2 1 5 Pulse Test 20 A ID = 50 A 10 A 12 VGS = 4 V 10 V Pulse Test 25°C Operation in this area is limited by RDS (on) VDS = 10 V Pulse Test Ta = 25°C 10 µs 1 ms DC Operation (Tc = 25°C) 100 µs –25°C Tc = 75°C |
Numéro de pièce similaire - 2SK3159-E |
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Description similaire - 2SK3159-E |
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