2SJ244JYTR-E datasheet(4/7 Pages) RENESAS

No de pièce	2SJ244JYTR-E

Description	Silicon P Channel MOS FET

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4 / 7 page

2SJ244

Rev.2.00 Sep 07, 2005 page 4 of 6

1.0

–25

0

25

50

75

100

Case Temperature

Tc (°C)

0

0.2

0.4

0.6

0.8

Drain to Source on State Resistance

vs. Temperature

Pulse Test

VGS = –2.5 V

VGS = –4 V

ID = –1 A

–0.5 A

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

–0.1 –0.2

–0.5

–1

–2

–5

–10

2000

1000

500

100

200

50

20

di / dt = 10 A /

µs

PW = 10

µs

–0.1 –0.2

–0.5

–2

–1

–5

–10

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

1000

500

200

100

50

20

10

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

–25

0

Gate Charge

Qg (nc)

–10

0

–2

–4

–6

–8

0

–5

–10

–15

–20

Dynamic Input Characteristics

24

6

8

10

VDS

VGS

ID = –4 A

Pulse Test

2000

1000

500

100

200

50

20

–0.2

–0.5

–1

–2

–5

–10

–0.1

tf

tr

td(off)

td(on)

VGS = –4 V, VDD = –10 V

PW = 2

µs, Duty Cycle = 1 %

Drain Current

ID (A)

Switching Time vs. Drain Current

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–1.0

0

–0.2

–0.4

–0.6

–0.8

0–1

–2

–3

–4

–5

Pulse Test

ID = –1 A

–0.2 A

–0.1 A

–0.5 A

VDD = –10 V

–5 V

Numéro de pièce similaire - 2SJ244JYTR-E

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