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STB270N4F3 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STB270N4F3 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 15 page April 2008 Rev 2 1/15 15 ■ 100% avalanche tested ■ Standard threshold drive Applications ■ High current, switching application ■ Automotive Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size“strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram Features Type VDSS RDS(on) max ID PTOT STB270N4F3 40 V < 2.5 m Ω 160 A 330 W STI270N4F3 40 V < 2.9 m Ω 120 A 330 W STP270N4F3 40 V < 2.9 m Ω 120 A 330 W 1 2 3 1 2 3 1 3 TO-220 D²PAK I²PAK Table 1. Device summary Order codes Marking Package Packaging STB270N4F3 270N4F3 D²PAK Tape and reel STI270N4F3 270N4F3 I²PAK Tube STP270N4F3 270N4F3 TO-220 Tube STB270N4F3 STI270N4F3 - STP270N4F3 N-channel 40 V - 2.1 m Ω - 160 A - TO-220 - D2PAK - I2PAK STripFET™ Power MOSFET www.st.com |
Numéro de pièce similaire - STB270N4F3_08 |
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Description similaire - STB270N4F3_08 |
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