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2SJ161 Fiches technique(PDF) 3 Page - Renesas Technology Corp

No de pièce 2SJ161
Description  Silicon P Channel MOS FET
Download  6 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ161 Fiches technique(HTML) 3 Page - Renesas Technology Corp

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2SJ160, 2SJ161, 2SJ162
Rev.2.00 Sep 07, 2005 page 3 of 5
Main Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0
–10
–20
–30
–40
–50
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–0.4
–0.8
–1.2
–1.6
–2.0
Tc = –25°C
75°C
75°C
150
0
50
100
0
50
100
150
VDS = –10 V
–9
–1 V
–2
–3
–4
–5
–6
–7
–8
VGS = 0
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
–5
–2
–1
–0.5
–0.2
–5
–10 –20
–50 –100 –200
–500
–20
–10
Ta = 25°C
Tc = 25°C
ID max (Continuous)
(–14.3 V,
–7 A)
2SJ160
2SJ161
2SJ162
(–120 V, –0.83 A)
Gate to Source Voltage
VGS (V)
Drain to Source Voltage vs.
Gate to Source Voltage
–10
0
–2
–4
–6
–8
0–2
–4
–6
–8
–10
Pulse Test
ID = –1 A
–2 A
–5 A
Drain Current
ID (A)
Drain to Source Saturation Voltage vs.
Drain Current
–2
–1
–0.2
–0.5
–0.1
–0.5
–2
–5
–0.1
–1
–10
–0.2
–10
–5
VGD = 0 V
Pch
= 100
W
Tc = –25°C
25°C
(–140 V, –0.71 A)
(–160 V, –0.63 A)
25°C


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