Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

2SK2927-E Fiches technique(PDF) 2 Page - Renesas Technology Corp

No de pièce 2SK2927-E
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK2927-E Fiches technique(HTML) 2 Page - Renesas Technology Corp

  2SK2927-E Datasheet HTML 1Page - Renesas Technology Corp 2SK2927-E Datasheet HTML 2Page - Renesas Technology Corp 2SK2927-E Datasheet HTML 3Page - Renesas Technology Corp 2SK2927-E Datasheet HTML 4Page - Renesas Technology Corp 2SK2927-E Datasheet HTML 5Page - Renesas Technology Corp 2SK2927-E Datasheet HTML 6Page - Renesas Technology Corp 2SK2927-E Datasheet HTML 7Page - Renesas Technology Corp 2SK2927-E Datasheet HTML 8Page - Renesas Technology Corp  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
2SK2927
Rev.6.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
10
A
Drain peak current
ID(pulse)
Note1
40
A
Body-drain diode reverse drain current
IDR
10
A
Avalanche current
IAP
Note3
10
A
Avalanche energy
EAR
Note3
8.5
mJ
Channel dissipation
Pch
Note2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
10
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
0.055
0.075
ID = 5 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
0.090
0.150
ID = 5 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
5
8
S
ID = 5 A, VDS = 10 V
Note4
Input capacitance
Ciss
350
pF
Output capacitance
Coss
190
pF
Reverse transfer capacitance
Crss
70
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
10
ns
Rise time
tr
55
ns
Turn-off delay time
td(off)
60
ns
Fall time
tf
70
ns
ID = 5 A, VGS = 10 V,
RL = 6
Body–drain diode forward voltage
VDF
0.9
V
IF = 10 A, VGS = 0
Body–drain diode reverse
recovery time
trr
50
ns
IF = 10 A, VGS = 0
diF/ dt =50 A/
µs
Note:
4. Pulse test


Numéro de pièce similaire - 2SK2927-E

FabricantNo de pièceFiches techniqueDescription
logo
Hitachi Semiconductor
2SK2927 HITACHI-2SK2927 Datasheet
52Kb / 10P
   Silicon N Channel MOS FET High Speed Power Switching
logo
VBsemi Electronics Co.,...
2SK2927 VBSEMI-2SK2927 Datasheet
1Mb / 9P
   N-Channel 60 V (D-S) MOSFET
logo
Inchange Semiconductor ...
2SK2927 ISC-2SK2927 Datasheet
305Kb / 2P
   isc N-Channel MOSFET Transistor
More results

Description similaire - 2SK2927-E

FabricantNo de pièceFiches techniqueDescription
logo
Renesas Technology Corp
H7N0608LD RENESAS-H7N0608LD Datasheet
118Kb / 12P
   Silicon N Channel MOS FET High Speed Power Switching
H5N1503P RENESAS-H5N1503P Datasheet
81Kb / 7P
   Silicon N Channel MOS FET High Speed Power Switching
RJK6015DPK RENESAS-RJK6015DPK Datasheet
107Kb / 7P
   Silicon N Channel MOS FET High Speed Power Switching
H7N0310LD RENESAS-H7N0310LD Datasheet
131Kb / 14P
   Silicon N Channel MOS FET High Speed Power Switching
2SK2788 RENESAS-2SK2788_11 Datasheet
82Kb / 7P
   Silicon N Channel MOS FET High Speed Power Switching
RJK5013DPE RENESAS-RJK5013DPE_15 Datasheet
89Kb / 7P
   Silicon N Channel MOS FET High Speed Power Switching
RJL5014DPK RENESAS-RJL5014DPK_15 Datasheet
89Kb / 7P
   Silicon N Channel MOS FET High Speed Power Switching
H5N5006DL RENESAS-H5N5006DL_15 Datasheet
113Kb / 10P
   Silicon N Channel MOS FET High Speed Power Switching
H7N1005LD RENESAS-H7N1005LD_15 Datasheet
145Kb / 11P
   Silicon N Channel MOS FET High Speed Power Switching
HAT2179R RENESAS-HAT2179R_15 Datasheet
126Kb / 9P
   Silicon N Channel MOS FET High Speed Power Switching
H7N1005DL RENESAS-H7N1005DL_15 Datasheet
139Kb / 11P
   Silicon N Channel MOS FET High Speed Power Switching
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com