2SK2978ZYTL-E datasheet(4/7 Pages) RENESAS

No de pièce	2SK2978ZYTL-E

Description	Silicon N Channel MOS FET High Speed Power Switching

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Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

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4 / 7 page

2SK2978

Rev.5.00 Sep. 07, 2005 page 4 of 6

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Forward Transfer Admittance

vs. Drain Current

Drain Current ID (A)

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current IDR (A)

Typical Capacitance

vs. Drain to Source Voltage

Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

Gate Charge Qg (nc)

Switching Characteristics

Drain Current ID (A)

0.25

0.2

0.15

0.1

0.05

–40

0

40

80

120

160

0

0.1

0.2

0.5

1

25

10

5

1

2

0.2

0.5

0.1

1 A

VGS = 4 V

1, 2.5 A

5 A

2.5 V

2.5 A

ID = 5 A

Tc = –25

°C

25

°C

75

°C

VDS = 10 V

Pulse Test

0.1

0.2

0.5

1

2

510

0

5

10

15

20

25

30

1000

100

300

50

40

30

20

10

0

20

16

12

8

4

8

12

16

20

0

1000

100

200

20

10

0.1

0.2

2

10

100

20

50

10

3

1

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

ID = 2.5 A

VGS

VDS

0.5

5

500

50

VDD = 10 V

5 V

VDD = 10 V

5 V

tr

td(off)

tf

td(on)

VGS = 4 V, VDD = 10 V

PW = 5

µs, duty < 1 %

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

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