Moteur de recherche de fiches techniques de composants électroniques |
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2SK2084 Fiches technique(PDF) 4 Page - Renesas Technology Corp |
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2SK2084 Fiches technique(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK2084(L), 2SK2084(S) Rev.2.00 Sep 07, 2005 page 4 of 7 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Reverse Drain Current IDR (A) Body to Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics 0.20 0.16 0.12 0.08 0.04 –40 0 40 80 120 160 0 Pulse Test VGS = 4 V 10 V 5 A 1 A 2 A 1 A 2 A 5 A 0.1 20 10 5 2 1 0.5 0.2 0.5 1 2 5 10 Tc = –25 °C 25 °C 75 °C VDS = 10 V Pulse Test 0.1 0.2 0.5 1 2 5 10 200 100 20 10 50 di / dt = 20 A / µs VGS = 0, Ta = 25°C 10000 1000 100 10 04 8 12 16 20 Ciss Coss Crss VGS = 0 f = 1 MHz 50 40 30 20 10 0 8 16 24 32 40 20 16 12 8 4 0 VGS VDS VDD = 20 V 10 V 5 V VDD = 20 V 10 V 5 V 0.1 0.2 0.5 1 2 5 10 200 100 20 10 50 VGS = 10 V VDD = 20 V PW = 5 µs duty < 1 % tf tr td(on) td(off) |
Numéro de pièce similaire - 2SK2084 |
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Description similaire - 2SK2084 |
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