2SK1968 datasheet(4/7 Pages) RENESAS

No de pièce	2SK1968

Description	Silicon N Channel MOS FET

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2SK1968

Rev.2.00 Sep 07, 2005 page 4 of 6

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Forward Transfer Admittance

vs. Drain Current

Drain Current ID (A)

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current IDR (A)

Typical Capacitance

vs. Drain to Source Voltage

Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

Gate Charge Qg (nc)

Switching Characteristics

Drain Current ID (A)

2.0

1.6

1.2

0.8

0.4

–40

0

40

80

120

160

10 A

I

= 5 A

Pulse test

V

= 10 V

GS

D

0

50

20

10

5

2

1

0.5

0.1 0.2

0.5

1

2

5

10

20

Pulse test

V

= 20 V

DS

Tc = –25

°C

25

°C

75

°C

3000

2000

1000

500

200

100

0.1 0.2

0.5

1

2

5

10

20

di/dt = 100 A/

µs

V

= 0, Ta = 25

°C

GS

5000

2000

1000

500

200

100

50

20

10

010

20

30

40

50

Ciss

Coss

Crss

V

= 0

f = 1 MHz

GS

1000

800

600

400

200

0

204060

80

100

I

= 12 A

D

VGS

VDS

V

= 100 V

250 V

400 V

DD

V

= 400 V

250 V

100 V

DD

20

16

12

8

4

0

300

200

100

50

20

10

0.1 0.2

0.5

1

2

5

10

20

V

= 10 V, PW = 5

µs

duty

1 %, V

30 V

GS

DD

td(off)

tf

td(on)

tr

Numéro de pièce similaire - 2SK1968

Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	2SK1968	47Kb / 10P	Silicon N-Channel MOS FET
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Description similaire - 2SK1968

Fabricant	No de pièce	Fiches technique	Description
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	2SK619	35Kb / 1P	SILICON N-CHANNEL MOS FET
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