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2SK1338 Fiches technique(PDF) 2 Page - Renesas Technology Corp

No de pièce 2SK1338
Description  Silicon N Channel MOS FET
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1338 Fiches technique(HTML) 2 Page - Renesas Technology Corp

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2SK1338
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
900
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
2
A
Drain peak current
ID(pulse)
*1
6
A
Body to drain diode reverse drain current
IDR
2
A
Channel dissipation
Pch*2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to Source breakdown voltage
V(BR)DSS
900
V
ID = 10 mA, VGS = 0
Gate to Source breakdown voltage
V(BR)GSS
±30
V
IG =
±100 µA, VDS = 0
Gate to Source leak current
IGSS
±10
µA
VGS =
±25 V, VDS = 0
Zero Gate voltage Drain current
IDSS
250
µA
VDS = 720 V, VGS = 0
Gate to Source cutoff voltage
VGS(off)
2.0
3.0
V
ID = 1 mA, VDS = 10 V
Static Drain to Source on state
resistance
RDS(on)
5.0
7.0
ID = 1 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
0.9
1.5
S
ID = 1 A, VDS = 20 V *
3
Input capacitance
Ciss
425
pF
Output capacitance
Coss
175
pF
Reverse transfer capacitance
Crss
85
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
10
ns
Rise time
tr
35
ns
Turn-off delay time
td(off)
60
ns
Fall time
tf
50
ns
ID = 1 A, VGS = 10 V,
RL = 30
Body to Drain diode forward voltage
VDF
0.9
V
IF = 2 A, VGS = 0
Body to Drain diode reverse
recovery time
trr
700
ns
IF = 2 A, VGS = 0,
diF/dt = 100 A/
µs
Note:
3. Pulse test


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