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2SK1338 Fiches technique(PDF) 2 Page - Renesas Technology Corp |
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2SK1338 Fiches technique(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK1338 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 900 V Gate to source voltage VGSS ±30 V Drain current ID 2 A Drain peak current ID(pulse) *1 6 A Body to drain diode reverse drain current IDR 2 A Channel dissipation Pch*2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to Source breakdown voltage V(BR)DSS 900 — — V ID = 10 mA, VGS = 0 Gate to Source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 Gate to Source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero Gate voltage Drain current IDSS — — 250 µA VDS = 720 V, VGS = 0 Gate to Source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V Static Drain to Source on state resistance RDS(on) — 5.0 7.0 Ω ID = 1 A, VGS = 10 V * 3 Forward transfer admittance |yfs| 0.9 1.5 — S ID = 1 A, VDS = 20 V * 3 Input capacitance Ciss — 425 — pF Output capacitance Coss — 175 — pF Reverse transfer capacitance Crss — 85 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 10 — ns Rise time tr — 35 — ns Turn-off delay time td(off) — 60 — ns Fall time tf — 50 — ns ID = 1 A, VGS = 10 V, RL = 30 Ω Body to Drain diode forward voltage VDF — 0.9 — V IF = 2 A, VGS = 0 Body to Drain diode reverse recovery time trr — 700 — ns IF = 2 A, VGS = 0, diF/dt = 100 A/ µs Note: 3. Pulse test |
Numéro de pièce similaire - 2SK1338 |
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Description similaire - 2SK1338 |
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