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STP25NM50N Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STP25NM50N
Description  N-channel 500V - 0.11廓 - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP25NM50N Fiches technique(HTML) 3 Page - STMicroelectronics

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STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N
Electrical ratings
3/18
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 - I²PAK
D²PAK - TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
500
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)
500
V
VGS
Gate- source voltage
±25
V
ID
Drain current (continuous) at TC = 25°C
22
22 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100°C
14
14 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
88
88 (1)
A
PTOT
Total dissipation at TC = 25°C
160
40
W
Derating factor
1.28
0.32
W/°C
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
--
2500
V
dv/dt (3)
3.
ISD < 22A, di/dt < 400 A/µs, VDD =80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
–55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
TO-220 - I²PAK
D²PAK - TO-247
TO-220FP
Rthj-case
Thermal resistance junction-case Max
0.78
3.1
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
10
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Ias, Vdd=50V)
350
mJ


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