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STF23NM60N Fiches technique(PDF) 5 Page - STMicroelectronics |
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STF23NM60N Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 19 page STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Electrical characteristics 5/19 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS= 0 600 V dv/dt(1) 1. Characteristic value at turn off on inductive load Drain-source voltage slope VDD = 480 V, ID = 19 A, VGS = 10 V 30 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,@125 °C 1 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 23 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 9.5 A 0.150 0.180 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS =15 V, ID= 9.5 A 17 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f =1 MHz, VGS = 0 2050 140 8 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 260 pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain 4 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 19 A VGS = 10 V (see Figure 19) 60 10 30 nC nC nC |
Numéro de pièce similaire - STF23NM60N |
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Description similaire - STF23NM60N |
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