STP11NK50ZFP datasheet(3/16 Pages) STMICROELECTRONICS

No de pièce	STP11NK50ZFP

Description	N-channel 500 V, 0.48 廓 , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET

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STB11NK50Z - STP11NK50ZFP - STP11NK50Z

Electrical ratings

3/16

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

D²PAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

500

V

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

10

10(1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC=100 °C

6.3

6.3(1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

40

40(1)

A

PTOT

Total dissipation at TC = 25 °C

125

30

W

Derating factor

1

0.24

W/°C

VESD(G-S)

Gate source ESD (HBM-C= 100 pF,

R= 1.5 k

Ω)

4000

V

dv/dt(3)

3.

ISD ≤ 10 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (DC)

--

2500

V

TJ

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

D²PAK

TO-220FP

Rthj-case

Thermal resistance junction-case max

1

4.2

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

10

A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAR, VDD = 50 V)

190

mJ

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