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ST13003D-K Fiches technique(PDF) 3 Page - STMicroelectronics |
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ST13003D-K Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 8 page ST13003D-K Electrical characteristics 3/8 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Note (1) Pulsed duration = 300µs, duty cycle ≤1.5% Table 3. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICEV Collector cut-off current (VBE =-1.5V) VCE =700V VCE =700V Tc = 125°C 1 5 mA mA V(BR)EBO Emitter-Base breakdown voltage (IC = 0) IE =10mA 918 V VCEO(sus) (1) Collector-emitter sustaining voltage (IB = 0) IC =10mA 400 V VCE(sat) (1) Collector-emitter saturation voltage IC = 0.5A _ IB = 0.1A IC = 1A _ _ IB = 0.25A IC = 1.5A _ _ IB = 0.5A 0.5 1 3 V V V VBE(sat) (1) Base-emitter saturation voltage IC = 0.5A _ IB = 0.1A IC = 1A _ _ IB = 0.25A 1 1.2 V V hFE DC current gain IC =0.5A VCE =2V IC =1A VCE =2V 8 5 20 25 tr ts tf Resistive load Rise time Storage time Fall time VCC = 125V IC = 1A IB1 = 0.2A IB2 = -0.2A Tp = 25µs 1 4 0.7 µs µs µs ts Inductive load Storage time IC = 1A IB1 = 0.2A VBE =-5V L =50mH VClamp =300V 0.8 µs VF Diode forward voltage IC = 0.5A 1.5 V |
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