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FQA13N80 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FQA13N80 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA13N80_F109 Rev. A2 July 2007 QFET ® FQA13N80_F109 800V N-Channel MOSFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 68 nC) • Low Crss ( typical 30pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Absolute Maximum Ratings Thermal Characteristics D G S GS D TO-3PN FQA Series Symbol Parameter FQA13N80_F109 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 12.6 A - Continuous (TC = 100°C) 8.0 A IDM Drain Current - Pulsed (Note 1) 50.4 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1100 mJ IAR Avalanche Current (Note 1) 12.6 A EAR Repetitive Avalanche Energy (Note 1) 30 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 300 W - Derate above 25°C 2.38 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.42 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W |
Numéro de pièce similaire - FQA13N80_07 |
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Description similaire - FQA13N80_07 |
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