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FDD8882 Fiches technique(PDF) 6 Page - Fairchild Semiconductor |
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FDD8882 Fiches technique(HTML) 6 Page - Fairchild Semiconductor |
6 / 12 page FDD8882/FDU8882 Rev. C www.fairchildsemi.com 6 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge Waveforms for Constant Gate Current Typical Characteristics T C = 25°C unless otherwise noted 0.4 0.6 0.8 1.0 1.2 -80 -40 0 40 80 120 160 200 VGS = VDS, ID = 250µA TJ, JUNCTION TEMPERATURE ( oC) 0.90 0.95 1.00 1.05 1.10 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA 100 1000 0.1 1 10 30 3000 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD 0 2 4 6 8 10 0 5 10 15 20 25 Qg, GATE CHARGE (nC) VDD = 15V ID = 35A ID = 5A WAVEFORMS IN DESCENDING ORDER: |
Numéro de pièce similaire - FDD8882_08 |
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Description similaire - FDD8882_08 |
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