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FDD8882 Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDD8882 Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page FDD8882/FDU8882 Rev. C www.fairchildsemi.com 3 Dynamic Characteristics Switching Characteristics (VGS = 10V) Drain-Source Diode Characteristics Notes: 1: Package current limitation is 35A. 2: Starting TJ = 25°C, L = 0.1mH, IAS = 28A, VDD = 27V, VGS = 10V. 3 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 1260 - pF COSS Output Capacitance - 240 - pF CRSS Reverse Transfer Capacitance - 140 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz - 2.4 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 35A Ig = 1.0mA -22 33 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 11.7 17.6 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 1.2 1.8 nC Qgs Gate to Source Gate Charge - 3.7 - nC Qgs2 Gate Charge Threshold to Plateau - 2.5 - nC Qgd Gate to Drain “Miller” Charge - 4.6 - nC tON Turn-On Time VDD = 15V, ID = 35A VGS = 10V, RGS = 13Ω - - 135 ns td(ON) Turn-On Delay Time - 8 - ns tr Rise Time - 82 - ns td(OFF) Turn-Off Delay Time - 40 - ns tf Fall Time - 25 - ns tOFF Turn-Off Time - - 98 ns VSD Source to Drain Diode Voltage ISD = 35A - - 1.25 V ISD = 15A - - 1.0 V trr Reverse Recovery Time ISD = 35A, dISD/dt = 100A/µs- - 32 ns QRR Reverse Recovered Charge ISD = 35A, dISD/dt = 100A/µs- - 21 nC |
Numéro de pièce similaire - FDD8882_08 |
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Description similaire - FDD8882_08 |
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