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FFP08S60SN Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FFP08S60SN Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FFP08S60SN Rev. A www.fairchildsemi.com 2 Electrical Characteristics T C = 25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Units VFM1 IF = 8A IF = 8A TC = 25 oC TC = 125 oC - - 2.7 2.1 3.4 - V IRM1 VR = 600V VR = 600V TC = 25 oC TC = 125 oC - - - - 100 500 µA trr IF = 1A, di/dt = 100A/µs, VR = 30V TC = 25 oC- 13 - ns trr Irr S factor Qrr IF = 8A, di/dt = 200A/µs, VR = 390V TC = 25 oC - - - - 15 2.5 0.4 19 25 - - - ns A nC trr Irr S factor Qrr IF = 8A, di/dt = 200A/µs, VR = 390V TC = 125 oC - - - - 32 3.8 0.7 62 - - - - ns A nC WAVL Avalanche Energy ( L = 40mH) 10 - - mJ Test Circuit and Waveforms Notes: 1: Pulse: Test Pulse width = 300 µs, Duty Cycle = 2% |
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