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FDS4435BZ Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDS4435BZ Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page June 2007 ©2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C www.fairchildsemi.com 1 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m Ω Features Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Termination is Lead-free and RoHS compliant General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage -30 V VGS Gate to Source Voltage ±25 V ID Drain Current -Continuous TA = 25°C (Note 1a) -8.8 A -Pulsed -50 PD Power Dissipation TA = 25°C (Note 1a) 2.5 W Power Dissipation TA = 25°C (Note 1b) 1.0 EAS Single Pulse Avalanche Energy (Note 4) 24 mJ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case 25 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 Device Marking Device Package Reel Size Tape Width Quantity FDS4435BZ FDS4435BZ SO-8 13’’ 12mm 2500units G S S S D D D D Pin 1 SO-8 8 1 G S S S D D D D 5 6 7 3 2 4 |
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