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IRF6619PBF Fiches technique(PDF) 6 Page - International Rectifier

No de pièce IRF6619PBF
Description  DirectFET Power MOSFET
Download  10 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF6619PBF Fiches technique(HTML) 6 Page - International Rectifier

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IRF6619PbF
6
www.irf.com
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7.
∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 3)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
Fig 17b. Unclamped Inductive Waveforms
Fig 17a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Maximum Avalanche Energy Vs. Drain Current
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
0
200
400
600
800
1000
I D
TOP
12A
15A
BOTTOM
24A
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
V
DD
V
DS
L
D
D.U.T
+
-
R G
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
VGS
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
100
200
300
Single Pulse
ID = 24A
1K
VCC
DUT
0
L


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