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STA506A Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STA506A
Description  45V 4A QUAD POWER HALF BRIDGE
Download  14 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STA506A Fiches technique(HTML) 4 Page - STMicroelectronics

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STA506A
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Table 4. Absolute Maximum Ratings
Table 5. (*) Recommended Operating Conditions
(*) Performances not guaranteed beyond recommended Operating Conditions
Table 6. Thermal Data
Table 7. Electrical Characteristcs: refer to circuit in Fig.1 (VL = 3.3V; VCC = 32V; RL = 8Ω;
fsw = 384KHz; Tamb = 25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Pin 4,7,12,15)
45
V
Vmax
Maximum Voltage on pins 23 to 32 (logic reference)
5.5
V
Ptot
Power Dissipation (Tcase = 70°C)
50
W
Top
Operating Temperature Range
0 to 70
°C
Tstg, Tj
Storage and Junction Temperature
-40 to 150
°C
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
DC Supply Voltage
10
40
V
VL
Input Logic Reference
2.7
3.3
5.0
v
Tamb
Ambient Temperature
0
70
°C
Symbol
Parameter
Min.
Typ.
Max.
Unit
Tj-case
Thermal Resistance Junction to Case (thermal pad)
1.5
°C/W
TjSD
Thermal shut-down junction temperature
150
°C
Twarn
Thermal warning temperature
130
°C
thSD
Thermal shut-down hysteresis
25
°C
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
RdsON
Power Pchannel/Nchannel
MOSFET RdsON
Id=1A
200
270
m
Idss
Power Pchannel/Nchannel
leakage Idss
VCC =35V
50
µA
gN
Power Pchannel RdsON Matching Id=1A
95
%
gP
Power Nchannel RdsON
Matching
Id=1A
95
%
Dt_s
Low current Dead Time (static)
see test circuit no.1; see fig. 3
10
20
ns
Dt_d
High current Dead Time (dinamic) L=22
µH; C = 470nF; RL = 8 Ω
Id=3.5A; see fig. 5
50
ns
td ON
Turn-on delay time
Resistive load
100
ns
td OFF
Turn-off delay time
Resistive load
100
ns
tr
Rise time
Resistive load; as fig.3
25
ns
tf
Fall time
Resistive load; as fig. 3
25
ns
VCC
Supply voltage operating voltage
10
40
V
VIN-H
High level input voltage
VL/2
+300mV
V


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