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STP40NE03L-20 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STP40NE03L-20
Description  N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE??POWER MOSFET
Download  8 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP40NE03L-20 Fiches technique(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on Time
Rise Time
VDD =15 V
ID =20 A
RG =4.7
Ω
VGS =5 V
25
160
33
210
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =24 V
ID =40 A
VGS =5 V
29
12
14
38
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =24 V
ID =40 A
RG =4.7
Ω
VGS =5 V
25
120
155
33
160
210
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
40
160
A
A
VSD (
∗)
Forward On Voltage
ISD =40 A
VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 40 A
di/ dt = 100 A/
µs
VDD =20 V
Tj =150
oC
50
0.9
3.5
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STP40NE03L-20
3/8


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