STP3NA80 datasheet(1/10 Pages) STMICROELECTRONICS

No de pièce	STP3NA80

Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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STP3NA80

STP3NA80FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 3.5

Ω

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW INTRINSIC CAPACITANCES

s

GATE GHARGE MINIMIZED

s

REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the

most advanced high voltage technology. The

optimized

cell

layout

coupled

with

a

new

proprietary edge termination concur to give the

device low RDS(on) and gate charge, unequalled

ruggedness and superior switching performance.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

R DS(on)

ID

STP3NA80

STP3NA80FI

800 V

<4. 5

Ω

<4. 5

Ω

3.1 A

2A

1

2

3

TO-220

ISOWATT220

November 1993

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Unit

STP3NA80

STP5NA80FI

VDS

Drain-source Voltage (VGS =0)

800

V

VDG R

Drain-gate Volt age (RGS =20 k

Ω)800

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (cont inuous) at T c =25

oC3.1

2

A

ID

Drain Current (cont inuous) at T c =100

oC2

1.3

A

IDM(

•)

Drain Current (pulsed)

12.5

A

Ptot

Total Dissipation at Tc =25

oC

100

40

W

Derating Factor

1. 25

0.32

W/

oC

VISO

I nsulat ion Withstand Voltage (DC)



2000

V

Tstg

St orage Temperat ure

-65 to 150

oC

Tj

Max. Operat ing Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

1

2

3

1/10

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