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TYNX12TRG Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce TYNX12TRG
Description  Sensitive and Standard 12 A SCRS
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Characteristics
TN12, TS12 and TYNx12 Series
2/12
1
Characteristics
Table 1.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
TN12-G
TYN12
TN12-B/H
TS12-B/H
IT(RMS)
RMS on-state current (180° conduction angle)
Tc = 105° C
12
A
IT(AV)
Average on-state current (180° conduction angle)
Tc = 105° C
8
A
ITSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25° C
145
115
A
tp = 10 ms
140
110
I²tI²t Value for fusing
tp = 10 ms
Tj = 25° C
98
60
A2S
dI/dt
Critical rate of rise of on-state
current IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125° C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125° C
4
A
PG(AV)
Average gate power dissipation
Tj = 125° C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
° C
VRGM
Maximum peak reverse gate voltage (for TN12 and TYN12 only)
5
V
Table 2.
Sentitive electrical characteristics (Tj = 25° C, unless otherwise specified)
Symbol
Test Conditions
TS1220
Unit
IGT
VD = 12 V
RL = 140 Ω
MAX.
200
µA
VGT
MAX.
0.8
V
VGD
VD = VDRM RL = 3.3 kΩ RGK = 220 Ω
Tj = 125° C
MIN.
0.1
V
VRG
IRG = 10 µA
MIN.
8
V
IH
IT = 50 mA RGK = 1 kΩ
MAX.
5
mA
IL
IG = 1 mA
RGK = 1 kΩ
MAX.
6
mA
dV/dt
VD = 65 % VDRM RGK = 220 Ω
Tj = 125° C
MIN.
5
V/µs
VTM
ITM = 24 A tp = 380 µs
Tj = 25° C
MAX.
1.6
V
Vt0
Threshold voltage
Tj = 125° C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125° C
MAX.
30
m
Ω
IDRM
IRRM
VDRM = VRRM
RGK = 220 Ω
Tj = 25° C
MAX.
5µA
Tj = 125° C
2
mA


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