STGE200NB60S datasheet(5/13 Pages) STMICROELECTRONICS

No de pièce	STGE200NB60S

Description	N-CHANNEL 150A - 600V - ISOTOP PowerMESH??IGBT

Download	13 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

Logo

5 / 13 page

STGE200NB60S

Electrical characteristics

5/13

Table 5.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

(di/dt)on

Delay time

Current rise time

Turn-on current slope

IC = 100A , VCC = 480V

VGE = 15V , RG =3Ω

Tj = 25°C (see Figure 17)

64

112

1840

ns

A/µs

td(on)

tr

(di/dt)on

Dealy time

Current rise time

Turn-on current slope

IC = 100A , VCC = 480V

VGE = 15V , RG=3Ω

Tj = 125°C (see Figure 17)

56

114

1800

ns

A/µs

tc

tr(Voff)

td(off)

tf

Cross-over time

Off voltage rise time

Delay time

Current fall time

IC = 100A , VCC = 480V

VGE = 15V , RG =3Ω

Tj = 25°C (see Figure 17)

2.98

1.7

2.4

1.23

µs

tc

tr(Voff)

td(off)

tf

Cross-over time

Off voltage rise time

Delay time

Current fall time

IC = 100A , VCC = 480V

VGE = 15V , RG=3Ω

Tj = 125°C (see Figure 17)

4.52

2.6

2.8

1.8

µs

Table 6.

Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon (1)

Eoff

(2)

Ets

1.

Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17

2.

Turn-off losses include also the tail of the collector current.

Turn-on switching losses

Turn-off switching loss

Total switching loss

VCC = 480V, IC = 100A

RG= 3Ω, VGE= 15V, Tj= 25°C

(see Figure 17)

11.7

59

70.7

mJ

Eon (1)

Eoff

(2)

Ets

Turn-on switching losses

Turn-off switching loss

Total switching loss

VCC = 480V, IC = 100A

RG= 3Ω, VGE= 15V,

Tj= 125°C (see Figure 17)

12

92

104

mJ

Numéro de pièce similaire - STGE200NB60S

Fabricant	No de pièce	Fiches technique	Description
Inchange Semiconductor ...	STGE200NB60S	600Kb / 4P	IGBT

More results

Description similaire - STGE200NB60S

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STGE50NB60HD	47Kb / 6P	N-CHANNEL 50A - 600V ISOTOP PowerMESH IGBT
	STE40NC60	270Kb / 8P	N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?줚I MOSFET
	STGD7NB60H	327Kb / 9P	N-CHANNEL 7A - 600V - DPAK PowerMESH??IGBT
	STGD7NB60H-1	86Kb / 8P	N-CHANNEL 7A - 600V IPAK PowerMESH IGBT
	STGY50NB60HD	45Kb / 6P	N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT
	STGB7NB60HD	322Kb / 8P	N-CHANNEL 7A - 600V DPAK PowerMESH IGBT
	STGP3NB60H	87Kb / 8P	N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT
	STGW12NB60H	86Kb / 8P	N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT
	STGW30NB60HD	91Kb / 8P	N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT
	STGB3NB60HD	91Kb / 8P	N-CHANNEL 3A - 600V TO-263 PowerMESH IGBT

More results

STGE200NB60S Fiches technique(PDF) 5 Page - STMicroelectronics

STGE200NB60S Fiches technique(HTML) 5 Page - STMicroelectronics

Numéro de pièce similaire - STGE200NB60S

Description similaire - STGE200NB60S

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Fiches technique Télécharger

Lien URL