STGB7NB40LZ datasheet(2/8 Pages) STMICROELECTRONICS

No de pièce	STGB7NB40LZ

Description	N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH??IGBT

Download	8 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

Logo

2 / 8 page

STGB7NB40LZ

2/8

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

SWITCHING ON

Rthj-case

Thermal Resistance Junction-case Max

1.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max (free air)

62.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BV(CES)

Collector-Emitter Clamped

Voltage

IC =10mA, VGE =0,

Tc= - 40°C to 150°C; RG=1 KΩ

370

400

430

V

BV(ECS)

Emitter Collector Break-down

Voltage

IEC = 75 mA, VGE =0,

20

27

V

BVGE

Gate Emitter Break-down

Voltage

IG =± 2 mA

12

16

V

ICES

Collector-Emitter Leakage

Current

VGE =200 V, VGE =0, RG=1 KΩ

Tc=25°C

Tc=150°C

25

250

µA

IGES

Gate-Emitter Leakage

Current (VCE =0)

VGE =± 10 V,VCE = 0

1000

µA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate Threshold Voltage

VCE =VGE,IC = 1 mA, Tc=25°C

VCE =VGE,IC = 1 mA, Tc=150°C

1.2

0.75

2.2

1.8

V

VCE(SAT)

Collector-Emitter Saturation

Voltage

VGE =4.5 V, IC =7 A, Tj=25°C

VGE =5.0 V, IC =14A, Tc= 25°C

1.3

1.50

1.9

V

RGE

Gate Emitter Resistance

10

20

30

K

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Cies

Input Capacitance

VCE =25V,f= 1MHz, VGE =0

910

pF

Coes

Output Capacitance

80

pF

Cres

Reverse Transfer

Capacitance

15

pF

Qg

Gate Charge

VCE =40V,IC =7 A,

VGE =5V

22

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Delay Time

Current Rise Time

VCE =14V,RG =1KΩ ,

RL =1Ω, VGE =5 V

0.9

4.5

µs

td(off)

tf

Delay Time

Current Fall Time

VCE = 300 V, RG =1KΩ ,

RL =46Ω, VGE =5 V

4.4

3.6

µs

Numéro de pièce similaire - STGB7NB40LZ

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STGB7NB60FD	505Kb / 11P	N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT
	STGB7NB60FDT4	505Kb / 11P	N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT
	STGB7NB60HD	322Kb / 8P	N-CHANNEL 7A - 600V DPAK PowerMESH IGBT
	STGB7NB60KD	710Kb / 14P	N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH??IGBT
	STGB7NB60KD	330Kb / 12P	N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

More results

Description similaire - STGB7NB40LZ

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STGB10NB37LZ	92Kb / 8P	N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
	STGB10NB40LZ	481Kb / 10P	N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
	STGB20NB37LZ	50Kb / 6P	N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
	STGB20NB37LZ	382Kb / 8P	N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT
	STGB10NB37LZ	445Kb / 10P	N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT
	STGB20NB32LZ	494Kb / 11P	N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT
	STGB20NB41LZ	258Kb / 9P	N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESH IGBT
	STGP10NB37LZ	267Kb / 9P	N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh??IGBT
	STGP20NB37LZ	50Kb / 6P	N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT
ON Semiconductor	MGP15N40CL	100Kb / 8P	Internally Clamped N-Channel IGBT April, 2000 ??Rev. 1

More results

STGB7NB40LZ Fiches technique(PDF) 2 Page - STMicroelectronics

STGB7NB40LZ Fiches technique(HTML) 2 Page - STMicroelectronics

Numéro de pièce similaire - STGB7NB40LZ

Description similaire - STGB7NB40LZ

Html Pages

1 2 3 4 5 6 7 8

Fiches technique Télécharger

Lien URL