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STD3NM50-1 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STD3NM50-1
Description  N-CHANNEL 500V - 2.5ohm - 3A DPAK/IPAK Zener-Protected MDmesh?줡ower MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD3NM50-1 Fiches technique(HTML) 3 Page - STMicroelectronics

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STD3NM50/STD3NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
Rise Time
VDD =250V, ID = 1.5A
RG = 4.7Ω VGS =10V
(see test circuit, Figure 3)
7ns
tr
10
ns
Qg
Total Gate Charge
VDD =400V, ID = 3A,
VGS =10V
5.5
nC
Qgs
Gate-Source Charge
2.5
nC
Qgd
Gate-Drain Charge
2.4
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 480V, ID =3A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
8ns
tf
Fall Time
9
ns
tc
Cross-over Time
15
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
3
A
ISDM (2)
Source-drain Current (pulsed)
12
A
VSD (1)
Forward On Voltage
ISD = 3A, VGS =0
1.5
V
trr
Reverse Recovery Time
ISD = 3A, di/dt = 100A/µs,
VDD =100 V, Tj =25°C
(see test circuit, Figure 5)
210
ns
Qrr
Reverse Recovery Charge
790
nC
IRRM
Reverse Recovery Current
7.5
A
trr
Reverse Recovery Time
ISD = 3A, di/dt = 100A/µs,
VDD =100 V, Tj =150°C
(see test circuit, Figure 5)
282
ns
Qrr
Reverse Recovery Charge
1.1
µC
IRRM
Reverse Recovery Current
7.7
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V


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