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STD1HNC60 Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STD1HNC60
Description  N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh?줚I MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD1HNC60 Fiches technique(HTML) 1 Page - STMicroelectronics

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February 2001
STD1HNC60
N-CHANNEL 600V - 4
Ω - 2A - IPAK/DPAK
PowerMesh™II MOSFET
s
TYPICAL RDS(on) = 4 Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
.
TYPE
VDSS
RDS(on)
ID
STD1HNC60
600 V
< 5
2 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
600
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
2A
ID
Drain Current (continuos) at TC = 100°C
1.3
A
IDM
(1)
Drain Current (pulsed)
8
A
PTOT
Total Dissipation at TC = 25°C
50
W
Derating Factor
0.4
W/°C
dv/dt
Peak Diode Recovery voltage slope
3.5
V/ns
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1)ISD ≤ 2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
IPAK
3
2
1
1
3
DPAK
TO-251
TO-252
INTERNAL SCHEMATIC DIAGRAM


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