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STD12NF06L Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STD12NF06L
Description  N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD12NF06L Fiches technique(HTML) 3 Page - STMicroelectronics

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STD12NF06L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V
ID = 6 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 3)
10
35
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V ID = 12 A VGS= 5V
7.5
2.5
3.0
10
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 30 V
ID = 6 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 3)
20
13
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
12
48
A
A
VSD (*)
Forward On Voltage
ISD = 12 A
VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A
di/dt = 100A/µs
VDD = 16 V
Tj = 150°C
(see test circuit, Figure 5)
50
67
2.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance


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