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STGB8NC60KD Fiches technique(PDF) 3 Page - STMicroelectronics |
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3 / 18 page STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD Electrical ratings 3/18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit D²PAK TO-220 DPAK TO-220FP VCES Collector-emitter voltage (VGE = 0) 600 V IC (1) 1. Calculated according to the iterative formula: Collector current (continuous) at TC = 25 °C 15 7 A IC (1) Collector current (continuous) at TC = 100 °C 84 A ICL (2) 2. Vclamp = 80% (VCES), VGE=15 V, RG=10 Ω, TJ=150 °C Turn-off latching current 30 A ICP (3) 3. Pulse width limited by max junction temperature allowed Pulsed collector current 30 A VGE Gate-emitter voltage ±20 V IF Diode RMS forward current at TC = 25 °C 7A IFSM Surge not repetitive forward current tp = 10 ms sinusoidal 20 A VISO Insulation withstand voltage (RMS) from all three leads to external hea sink ( t=1 s; TC = 25 °C) -- -- 2500 V PTOT Total dissipation at TC = 25 °C 65 62 24 W Tj Operating junction temperature – 55 to 150 °C Tscw Short circuit withstand time (VCE = 0.5 VBR(CES) , TC = 125 °C, RG = 10 Ω, VGE = 12 V) 10 µs Table 3. Thermal resistance Symbol Parameter Value Unit D²PAK TO-220 DPAK TO-220FP Rthj-case Thermal resistance junction-case max IGBT 1.9 2.0 5.1 °C/W Rthj-case Thermal resistance junction-case max diode 44.5 7 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W I C T C () T JMAX T C – R THJ C – V CESAT MAX () T C I C , () × ------------------------------------------------------------------------------------------------------ = |
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