STP85NF55L datasheet(3/10 Pages) STMICROELECTRONICS

No de pièce	STP85NF55L

Description	N-CHANNEL 55V - 0.0060 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

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STB85NF55L STP85NF55L

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD = 27.5 V

ID = 40 A

RG = 4.7 Ω

VGS = 5 V

(Resistive Load, Figure 3)

35

165

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=27.5V ID=80A VGS=5V

(see test circuit, Figure 4)

80

20

45

110

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay Time

Fall Time

VDD = 27.5 V

ID = 40 A

RG = 4.7Ω,

VGS = 5 V

(Resistive Load, Figure 3)

70

55

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (•)

Source-drain Current

Source-drain Current (pulsed)

80

320

A

VSD (*)

Forward On Voltage

ISD = 80 A

VGS = 0

1.5

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 80 A

di/dt = 100A/µs

VDD = 20 V

Tj = 150°C

(see test circuit, Figure 5)

80

240

6

ns

nC

A

Thermal Impedance

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area

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