TIP107 datasheet(2/4 Pages) TAITRON

No de pièce	TIP107

Description	Darlington Power Transistors (PNP)

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Fabricant	TAITRON [TAITRON Components Incorporated]

Site Internet	http://www.taitroncomponents.com

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2 / 4 page

Rev. A/AH 2008-06-13

TIP105/106/107

Darlington Power Transistors (PNP)

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Page 2 of 4

Electrical Characteristics (T

Ambient=25ºC unless noted otherwise)

Symbol

Description

Min.

Max.

Unit

Conditions

1000

20000

VCE=4V, IC=3A

*

hFE

D.C. Current Gain

200

-

VCE=4V, IC=8A

TIP105

60

-

V

TIP106

80

-

V

*

VCEO(sus)

Collector-Emitter Sustaining

Voltage

TIP107

100

-

V

IC=30mA, IB=0

-

2.0

V

IC=3A, IB=6mA

*

VCE(sat)

Collector-Emitter Saturation Voltage

-

2.5

V

IC=8A, IB=80mA

*

VBE(on)

Base-Emitter On Voltage

-

2.8

V

IC=8A, VCE=4V

TIP105

-

50

VCE=30V, IB=0

TIP106

-

50

VCE=40V, IB=0

ICEO

Collector-Emitter Cut-off

Current

TIP107

-

50

μA

VCE=50V, IB=0

TIP105

-

50

VCB=60V, IE=0

TIP106

-

50

VCB=80V, IE=0

ICBO

Collector-Base Cut-off

Current

TIP107

-

50

μA

VCB=100V, IE=0

IEBO

Emitter-Base Cut-off Current

-

8.0

mA

VEB=5V, IC=0

*

VF

Forward Voltage of Commutation Diode

-

6.0

V

IF=IC=10A, IB=0

*Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

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