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STB50NH02L Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STB50NH02L
Description  N-CHANNEL 24V - 0.011ohm - 50A D짼PAK STripFET??III POWER MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB50NH02L Fiches technique(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (4)
DYNAMIC
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
2.5
62.5
300
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 25 mA, VGS = 0
24
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = 20 V
VDS = 20 V
TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
1
1.8
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 25 A
VGS = 5 V
ID = 12.5 A
0.011
0.015
0.0135
0.025
Ω
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (4)
Forward Transconductance
VDS = 10 V
ID = 19 A
19
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 15V f = 1 MHz VGS = 0
1070
305
45
pF
pF
pF
RG
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level =20 mV
Open Drain
1
Ω


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