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ST93CS47M6013TR Fiches technique(PDF) 2 Page - STMicroelectronics |
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ST93CS47M6013TR Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 16 page DESCRIPTION (cont’d) The data is then clocked out serially. The address pointer is automatically incremented after the data is output and, if the Chip Select input (S) is held High, the ST93CS46/47 can output a sequential stream of data words. In this way, the memory can be read as a data stream of 16 to 1024 bits, or continuously as the address counter automatically rolls over to 00 when the highest address is reached. Within the time required by a program- ming cycle (tW), up to 4 words may be written with the help of the Page Write instruction; the whole memory may also be erased, or set to a predeter- mined pattern, by using the Write All instruction. Within the memory, an user defined area may be protected against further Write instructions. The size of this area is defined by the content of a VSS Q W PRE C SVCC D AI00885B ST93CS46 ST93CS47 1 2 3 4 8 7 6 5 Figure 2A. DIP Pin Connections 1 VSS Q W PRE C SVCC D AI00886C ST93CS46 ST93CS47 2 3 4 8 7 6 5 Figure 2B. SO Pin Connections Symbol Parameter Value Unit TA Ambient Operating Temperature –40 to 85 °C TSTG Storage Temperature –65 to 150 °C TLEAD Lead Temperature, Soldering (SO8 package) (PSDIP8 package) 40 sec 10 sec 215 260 °C VIO Input or Output Voltages (Q = VOH or Hi-Z) –0.3 to VCC +0.5 V VCC Supply Voltage –0.3 to 6.5 V VESD Electrostatic Discharge Voltage (Human Body model) (2) 3000 V Electrostatic Discharge Voltage (Machine model) (3) 500 V Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents. 2. MIL-STD-883C, 3015.7 (100pF, 1500 Ω). 3. EIAJ IC-121 (Condition C) (200pF, 0 Ω). Table 2. Absolute Maximum Ratings (1) Protect Register, located outside of the memory array. As a final protection step, data may be per- manently protected by programming a One Time Programing bit (OTP bit) which locks the Protect Register content. Programming is internally self-timed (the external clock signal on C input may be disconnected or left running after the start of a Write cycle) and does not require an erase cycle prior to the Write instruc- tion. The Write instruction writes 16 bits at one time into one of the 64 words, the Page Write instruction writes up to 4 words of 16 bits to sequential loca- tions, assuming in both cases that all addresses are outside the Write Protected area. After the start of the programming cycle, a Ready/Busy signal is available on the Data output (Q) when the Chip Select (S) input pin is driven High. 2/16 ST93CS46, ST93CS47 |
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