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ST931ZT Fiches technique(PDF) 2 Page - STMicroelectronics |
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ST931ZT Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.2 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEO Collector Cut-off Current (IB = 0) VCE = 300 V VCE = 300 V Tj = 125 oC 100 0.5 µA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 20 mA VCL ∗ Clamping Voltage IC = 100 mA 350 500 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 7 A IB = 70 mA IC = 8 A IB = 100 mA 1.6 1.8 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 7 A IB = 70 mA IC = 8 A IB = 100 mA 2.2 2.4 V V hFE ∗ DC Current Gain IC = 5 A VCE = 10 V 300 VF Diode Forward Voltage IF = 8 A 2.5 V Functional Test (see fig. 1) VCC = 24 V L= 7 mH 8 A ts tf INDUCTIVE LOAD Storage Time Fall Time (see fig. 3) VCC = 12 V L= 7 mH Vclamp = 300 V IC = 7 A IB = 70 mA VBE = 0 RBE = 47 Ω 15 0.5 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ST931ZT 2/4 |
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Description similaire - ST931ZT |
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