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EM610FV8T Fiches technique(PDF) 6 Page - Emerging Memory & Logic Solutions Inc |
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EM610FV8T Fiches technique(HTML) 6 Page - Emerging Memory & Logic Solutions Inc |
6 / 11 page EM610FV8T Series Low Power, 128Kx8 SRAM 6 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. tRC Address CS1 CS2 OE Data Out tCO tOH t OE High-Z t OHZ TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH) Data Valid t OLZ t LZ tAA tHZ tRC Address tAA Data Valid tOH Previous Data Valid TIMING WAVEFORM OF READ CYCLE(1). (Address Controlled, CS1=OE=V IL, CS2= WE=V IH ) Data Out TIMING DIAGRAMS NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. |
Numéro de pièce similaire - EM610FV8T |
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Description similaire - EM610FV8T |
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