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EM610FV8T Fiches technique(PDF) 6 Page - Emerging Memory & Logic Solutions Inc

No de pièce EM610FV8T
Description  128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Download  11 Pages
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Fabricant  EMLSI [Emerging Memory & Logic Solutions Inc]
Site Internet  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM610FV8T Fiches technique(HTML) 6 Page - Emerging Memory & Logic Solutions Inc

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EM610FV8T Series
Low Power, 128Kx8 SRAM
6
merging Memory & Logic Solutions Inc.
merging Memory & Logic Solutions Inc.
tRC
Address
CS1
CS2
OE
Data Out
tCO
tOH
t
OE
High-Z
t
OHZ
TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH)
Data Valid
t
OLZ
t
LZ
tAA
tHZ
tRC
Address
tAA
Data Valid
tOH
Previous Data Valid
TIMING WAVEFORM OF READ CYCLE(1). (Address Controlled, CS1=OE=V
IL, CS2= WE=V IH )
Data Out
TIMING DIAGRAMS
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.


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