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TPS2062ADRBTG4 Fiches technique(PDF) 7 Page - Texas Instruments |
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TPS2062ADRBTG4 Fiches technique(HTML) 7 Page - Texas Instruments |
7 / 23 page VO(OC) 2V/div IO(OUT) 1A/div t − Time − 2ms/div VO(OC) 2V/div IO(OUT) 1A/div t − Time − 2ms/div POWER-SUPPLY CONSIDERATIONS IN OC1 EN1 OC2 2 8 5 7 0.1 F m 22 F m 0.1 F m 22 F m Load Load OUT1 OUT2 PowerSupply 2.7Vto5.5V 6 EN2 3 4 GND 0.1 F m TPS2062A 1 DETAILED DESCRIPTION OVERVIEW TPS2062A TPS2066A www.ti.com ..................................................................................................................................................... SLVS798D – JANUARY 2008 – REVISED APRIL 2008 PARAMETER MEASUREMENT INFORMATION (continued) Figure 8. 2- Ω Load Connected to Enabled Device Figure 9. 1- Ω Load Connected to Enabled Device Figure 10. Typical Application The devices are current-limited, power distribution switches using N-channel MOSFETs for applications where short-circuits or heavy capacitive loads will be encountered. These devices have a minimum fixed current-limit threshold above 1.1 A allowing for continuous operation up to 1 A per channel. Overtemperature protection is an addtional device shutdown feature. Each device incorporates an internal charge pump and gate drive circuitry necessary to drive the N-channel MOSFETs. The charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires little supply current. The driver controls the gate voltage of the power switch. The driver incorporates circuitry that controls the rise and fall times of the output voltage to provide "soft-start" and to limit large current and voltage surges. Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Link(s): TPS2062A TPS2066A |
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